Regular Spiking (RS) Cell

Model Type:
Cell
Neurolex IDs: None
Keywords: neocortex, minimal models, Neuron or other electrically excitable cell, Channel/Receptor, Parameter Fitting, Simplified Models
Publication: Pospischil, et. al. (2008) Minimal Hodgkin-Huxley type models for different classes of cortical and thalamic neurons.
Authors:
Martin Pospischil   Maria Toledo-Rodriguez   Cyril Monier   Zuzanna Piwkowska   Thierry Bal   Yves Fr├ęgnac   H Markram   Alain Destexhe  
Translators: Padraig Gleeson   Justas Birgiolas  
Sources:
Files:
Model ID NeuroML File
NMLCL001127
RS.cell.nml
( view NeuroML )
NMLCH000128
IM.channel.nml
( view NeuroML )
NMLCH000129
Kd.channel.nml
( view NeuroML )
NMLCH000130
Leak.channel.nml
( view NeuroML )
NMLCH000131
Na.channel.nml
( view NeuroML )
Notes: None
Model Id: NMLCL001127
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Accommodating Fast Spikers (aFS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.57 mV
Rheobase Current Interval (0.55939, 0.57014] nA
Threshold Current Interval (2.69531, 2.75391] nA
Bias Current (to -80.00 mV) -0.2768 nA
Testing Temperature 36.0 °C
Stability Interval [-10.0, 15.0] nA
AP 1-2 Amplitude Drop -0.2301 mV
AP 1 Steady State Amplitude Change 0.1859 mV
AP 1 Amplitude 87.6793 mV
AP 1 Width at Half Height 0.6900 ms
AP 1 Width (Peak To Trough) 1.9800 ms
AP 1 Rate of Change Peak to Trough -57.8974 mV/ms
AP 1 AHP Depth 26.9576 mV
AP2 Amplitude 87.9094 mV
AP2 Width at Half Height 0.6900 ms
AP 2 Width (Peak to Trough) 1.9900 ms
AP 2 Rate of Change Peak to Trough -57.6211 mV/ms
AP 2 AHP Depth 26.7566 mV
AP 1-2 Amplitude Change Percent 0.2624 %
AP 1-2 Half Width Change Percent -0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -0.4773 %
AP 1-2 AHP Depth Percent Change -0.7455 %
Input Resistance 33.2506 MΩ
AP 1 Delay Mean 15.4900 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 35.7000 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 22.1750 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -44.4444 %
Steady State Accommodation Mean -44.4444 %
Accommodation Rate to Steady State -0.1211 %/ms
Accommodation at Steady State Mean -77.8637 %
Accommodation Rate Mean at Steady State 148.9952 ms
ISI CV 4.1975
ISI Median 71.3300 ms
ISI Burst Mean Change 19.4458 %
Spike Rate (Strong Stimulation) 84.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 5.7600 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 13.7700 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 8.1400 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2140.1700 ms
Frequency Filter Type High-Pass
Frequency Filter Pass Above 35.9808 Hz
Single compartment, abstract, or point cells do not have morphology data.
Complexity Summary
Relative Complexity 2.47 HH
State Equations 5
Optimal Time-Step 0.00756 ms
Model Size
Sections 1
Compartments 1
State Equations 5
Variable Time-Step Complexity
CVODE Steady State Step Frequency 15964 Hz
CVODE Steps Per AP 549
CVODE Benchmark Run Time 2.47 HH
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