Low Threshold Spiking (LTS) Cell

Model Type:
Cell
Neurolex IDs: None
Keywords: thalamus, minimal models
Publication: Pospischil, et. al. (2008) Minimal Hodgkin-Huxley type models for different classes of cortical and thalamic neurons.
Authors:
Martin Pospischil   Maria Toledo-Rodriguez   Cyril Monier   Zuzanna Piwkowska   Thierry Bal   Yves Fr├ęgnac   H Markram   Alain Destexhe  
Translators: Justas Birgiolas   Padraig Gleeson  
Sources:
Files:
Notes: None
Model Id: NMLCL001126
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Rapidly Adapting (RA)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -83.95 mV
Rheobase Current Interval (0.03662, 0.04028] nA
Threshold Current Interval (0.87891, 0.93750] nA
Bias Current (to -70.00 mV) 0.0339 nA
Testing Temperature 36.0 °C
Stability Interval [-10.0, 15.0] nA
AP 1-2 Amplitude Drop N/A mV
AP 1 Steady State Amplitude Change N/A mV
AP 1 Amplitude 90.5847 mV
AP 1 Width at Half Height 0.7200 ms
AP 1 Width (Peak To Trough) 2.7200 ms
AP 1 Rate of Change Peak to Trough -43.0321 mV/ms
AP 1 AHP Depth 26.4626 mV
AP2 Amplitude N/A mV
AP2 Width at Half Height N/A ms
AP 2 Width (Peak to Trough) N/A ms
AP 2 Rate of Change Peak to Trough N/A mV/ms
AP 2 AHP Depth N/A mV
AP 1-2 Amplitude Change Percent N/A %
AP 1-2 Half Width Change Percent N/A %
AP 1-2 Rate of Change Peak to Trough Percent Change N/A %
AP 1-2 AHP Depth Percent Change N/A %
Input Resistance 382.0969 MΩ
AP 1 Delay Mean 73.2700 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean N/A ms
AP 2 Delay SD N/A ms
Burst 1 ISI Mean N/A ms
Burst 1 ISI SD N/A ms
Initial Accommodation Mean -100.0000 %
Steady State Accommodation Mean -100.0000 %
Accommodation Rate to Steady State N/A %/ms
Accommodation at Steady State Mean N/A %
Accommodation Rate Mean at Steady State N/A ms
ISI CV N/A
ISI Median N/A ms
ISI Burst Mean Change N/A %
Spike Rate (Strong Stimulation) 1.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 37.3800 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 56.9500 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) N/A ms
Burst 1 ISI SD (Strong Stimulation) N/A ms
Ramp First Spike Time 4166.1800 ms
Frequency Filter Type High-Pass
Frequency Filter Pass Above 36.4689 Hz
Single compartment, abstract, or point cells do not have morphology data.
Complexity Summary
State Equations 7
Optimal Time-Step 0.00772 ms
Relative Complexity 2.79 HH
Model Size
Sections 1
Compartments 1
State Equations 7
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00772 ms
Optimal Time-Step Error 0.00 %
Optimal Time-Step Benchmark Run Time 2.79 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 0.02 %
Max. Stable Time-Step Benchmark Run Time 5.38 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 20260 Hz
CVODE Steps Per AP 344
CVODE Benchmark Run Time 3.35 HH
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