Layer 6 Continuous Non-accommodating Bitufted Cell (4)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 6
Keywords: continuous non-accommodating,Layer 6,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000905
cNAC187_L6_BTC_bc69dce0ae_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000905
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Non-accommodating Regular Spikers (naRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -68.83 mV
Rheobase Current Interval (0.03662, 0.03754] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0293 nA
Testing Temperature 34.0 °C
Stability Interval [-1.25, 15.0] nA
AP 1-2 Amplitude Drop 0.7190 mV
AP 1 Steady State Amplitude Change 1.4908 mV
AP 1 Amplitude 68.7591 mV
AP 1 Width at Half Height 0.6400 ms
AP 1 Width (Peak To Trough) 3.3800 ms
AP 1 Rate of Change Peak to Trough -25.0702 mV/ms
AP 1 AHP Depth 15.9782 mV
AP2 Amplitude 68.0400 mV
AP2 Width at Half Height 0.6600 ms
AP 2 Width (Peak to Trough) 3.4600 ms
AP 2 Rate of Change Peak to Trough -24.1578 mV/ms
AP 2 AHP Depth 15.5461 mV
AP 1-2 Amplitude Change Percent -1.0457 %
AP 1-2 Half Width Change Percent 3.1250 %
AP 1-2 Rate of Change Peak to Trough Percent Change -3.6392 %
AP 1-2 AHP Depth Percent Change -2.7045 %
Input Resistance 383.6209 MΩ
AP 1 Delay Mean 19.9200 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 62.9600 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 43.4350 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean 0.0000 %
Steady State Accommodation Mean -11.1111 %
Accommodation Rate to Steady State -0.0152 %/ms
Accommodation at Steady State Mean -14.6554 %
Accommodation Rate Mean at Steady State 1853.4691 ms
ISI CV 32.7240
ISI Median 46.3000 ms
ISI Burst Mean Change 1.8355 %
Spike Rate (Strong Stimulation) 41.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 6.5700 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 28.6200 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 22.9200 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2070.9100 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 71.7189 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 10030.0 µm2
Number of Stems 4.0
Number of Bifurcations 34.0
Number of Branches 71.0
Overall Width 419.916 µm
Overall Height 517.572 µm
Overall Depth 364.85 µm
Average Diameter 0.681102 µm
Total Length 6233.85 µm
Total Surface 8293.71 µm2
Total Volume 4133.11 µm3
Max Euclidean Distance 372.283 µm
Max Path Distance 457.711 µm
Max Branch Order 7.0
Average Contraction 0.958949
Total Fragmentation 2481.0
Partition Asymmetry 0.346257
Average Rall's Ratio 1.06735
Average Bifurcation Angle Local 7.71235 °
Average Bifurcation Angle Remote 41.1396 °
Fractal Dimension 1.01091
Complexity Summary
State Equations 3161
Optimal Time-Step 0.00538 ms
Relative Complexity 1076.98 HH
Model Size
Sections 72
Compartments 314
State Equations 3161
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00538 ms
Optimal Time-Step Error 0.13 %
Optimal Time-Step Benchmark Run Time 1076.98 HH
 
Maximum Stable Time-Step 0.03125 ms
Maximum Stable Time-Step Error 0.89 %
Max. Stable Time-Step Benchmark Run Time 2894.54 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 13982 Hz
CVODE Steps Per AP 497
CVODE Benchmark Run Time 721.73 HH
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