Layer 5 Continuous Non-accommodating Bitufted Cell (4)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 5
Keywords: continuous non-accommodating,Layer 5,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000865
cNAC187_L5_BTC_a47bfc03bb_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000865
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Non-accommodating Regular Spikers (naRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -68.08 mV
Rheobase Current Interval (0.02266, 0.02335] nA
Threshold Current Interval (0.11719, 0.17578] nA
Bias Current (to -80.00 mV) -0.0287 nA
Testing Temperature 34.0 °C
Stability Interval [-1.5625, 15.0] nA
AP 1-2 Amplitude Drop 0.4605 mV
AP 1 Steady State Amplitude Change 0.6000 mV
AP 1 Amplitude 71.4143 mV
AP 1 Width at Half Height 0.6400 ms
AP 1 Width (Peak To Trough) 3.1300 ms
AP 1 Rate of Change Peak to Trough -27.2929 mV/ms
AP 1 AHP Depth 14.0124 mV
AP2 Amplitude 70.9538 mV
AP2 Width at Half Height 0.6400 ms
AP 2 Width (Peak to Trough) 3.1400 ms
AP 2 Rate of Change Peak to Trough -27.1993 mV/ms
AP 2 AHP Depth 14.4520 mV
AP 1-2 Amplitude Change Percent -0.6448 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -0.3429 %
AP 1-2 AHP Depth Percent Change 3.1369 %
Input Resistance 452.9699 MΩ
AP 1 Delay Mean 34.8600 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 93.4800 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 58.9500 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean 0.0000 %
Steady State Accommodation Mean -14.2857 %
Accommodation Rate to Steady State -0.0280 %/ms
Accommodation at Steady State Mean -13.7808 %
Accommodation Rate Mean at Steady State 2642.0403 ms
ISI CV 43.5424
ISI Median 61.5500 ms
ISI Burst Mean Change 1.1259 %
Spike Rate (Strong Stimulation) 35.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 11.2300 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 38.0500 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 27.7500 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2076.3800 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 111.0369 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 5143.78 µm2
Number of Stems 4.0
Number of Bifurcations 54.0
Number of Branches 111.0
Overall Width 396.783 µm
Overall Height 565.465 µm
Overall Depth 167.65 µm
Average Diameter 0.668279 µm
Total Length 4666.34 µm
Total Surface 8915.73 µm2
Total Volume 3055.92 µm3
Max Euclidean Distance 347.385 µm
Max Path Distance 399.112 µm
Max Branch Order 9.0
Average Contraction 0.954315
Total Fragmentation 2654.0
Partition Asymmetry 0.403164
Average Rall's Ratio 1.26034
Average Bifurcation Angle Local 23.9728 °
Average Bifurcation Angle Remote 63.7455 °
Fractal Dimension 1.0094
Complexity Summary
State Equations 2461
Optimal Time-Step 0.00765 ms
Relative Complexity 597.29 HH
Model Size
Sections 112
Compartments 244
State Equations 2461
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00765 ms
Optimal Time-Step Error 0.18 %
Optimal Time-Step Benchmark Run Time 597.29 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.17 %
Max. Stable Time-Step Benchmark Run Time 1142.23 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14050 Hz
CVODE Steps Per AP 460
CVODE Benchmark Run Time 560.40 HH
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