Layer 4 Continuous Non-accommodating Bitufted Cell (3)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 4
Keywords: continuous non-accommodating,Layer 4,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000824
cNAC187_L4_BTC_d58cc3840a_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000824
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Non-accommodating Regular Spikers (naRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -68.48 mV
Rheobase Current Interval (0.02197, 0.02289] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0269 nA
Testing Temperature 34.0 °C
Stability Interval [-1.25, 15.0] nA
AP 1-2 Amplitude Drop 0.4586 mV
AP 1 Steady State Amplitude Change 0.3541 mV
AP 1 Amplitude 74.2926 mV
AP 1 Width at Half Height 0.5900 ms
AP 1 Width (Peak To Trough) 3.9300 ms
AP 1 Rate of Change Peak to Trough -23.2602 mV/ms
AP 1 AHP Depth 17.1200 mV
AP2 Amplitude 73.8340 mV
AP2 Width at Half Height 0.5800 ms
AP 2 Width (Peak to Trough) 3.9400 ms
AP 2 Rate of Change Peak to Trough -23.2013 mV/ms
AP 2 AHP Depth 17.5792 mV
AP 1-2 Amplitude Change Percent -0.6173 %
AP 1-2 Half Width Change Percent -1.6949 %
AP 1-2 Rate of Change Peak to Trough Percent Change -0.2531 %
AP 1-2 AHP Depth Percent Change 2.6827 %
Input Resistance 440.7952 MΩ
AP 1 Delay Mean 36.7000 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 101.7800 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 65.3650 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean 0.0000 %
Steady State Accommodation Mean 0.0000 %
Accommodation Rate to Steady State 0.0000 %/ms
Accommodation at Steady State Mean -13.6765 %
Accommodation Rate Mean at Steady State 1467.6509 ms
ISI CV 31.3016
ISI Median 69.8300 ms
ISI Burst Mean Change 0.8758 %
Spike Rate (Strong Stimulation) 30.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 12.4500 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 43.6600 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 31.8000 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2129.2900 ms
Frequency Filter Type Constant
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 6347.0 µm2
Number of Stems 4.0
Number of Bifurcations 24.0
Number of Branches 51.0
Overall Width 249.77 µm
Overall Height 493.603 µm
Overall Depth 197.46 µm
Average Diameter 0.684689 µm
Total Length 3778.16 µm
Total Surface 7256.92 µm2
Total Volume 2803.4 µm3
Max Euclidean Distance 438.696 µm
Max Path Distance 493.135 µm
Max Branch Order 5.0
Average Contraction 0.95457
Total Fragmentation 1476.0
Partition Asymmetry 0.468452
Average Rall's Ratio 1.06357
Average Bifurcation Angle Local 55.5503 °
Average Bifurcation Angle Remote 79.0884 °
Fractal Dimension 1.0068
Complexity Summary
State Equations 1901
Optimal Time-Step 0.00768 ms
Relative Complexity 454.07 HH
Model Size
Sections 52
Compartments 188
State Equations 1901
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00768 ms
Optimal Time-Step Error 0.25 %
Optimal Time-Step Benchmark Run Time 454.07 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.24 %
Max. Stable Time-Step Benchmark Run Time 871.82 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 15062 Hz
CVODE Steps Per AP 406
CVODE Benchmark Run Time 438.56 HH
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