Layer 2/3 Continuous Non-accommodating Bitufted Cell (1)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: continuous non-accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted, biophysical, continuous non-accommodating bitufted cell, Realistic Network, Neuron or other electrically excitable cell, Synapse, Spatio-temporal Activity Patterns, Detailed Neuronal Models
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000787
cNAC187_L23_BTC_13a502998f_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000787
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Non-accommodating Regular Spikers (naRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -68.97 mV
Rheobase Current Interval (0.02197, 0.02289] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0229 nA
Testing Temperature 34.0 °C
Stability Interval [-1.25, 15.0] nA
AP 1-2 Amplitude Drop 0.1017 mV
AP 1 Steady State Amplitude Change 0.3078 mV
AP 1 Amplitude 70.5895 mV
AP 1 Width at Half Height 0.6600 ms
AP 1 Width (Peak To Trough) 6.8800 ms
AP 1 Rate of Change Peak to Trough -13.1505 mV/ms
AP 1 AHP Depth 19.8863 mV
AP2 Amplitude 70.4878 mV
AP2 Width at Half Height 0.6700 ms
AP 2 Width (Peak to Trough) 6.9300 ms
AP 2 Rate of Change Peak to Trough -13.0450 mV/ms
AP 2 AHP Depth 19.9141 mV
AP 1-2 Amplitude Change Percent -0.1440 %
AP 1-2 Half Width Change Percent 1.5152 %
AP 1-2 Rate of Change Peak to Trough Percent Change -0.8025 %
AP 1-2 AHP Depth Percent Change 0.1400 %
Input Resistance 481.9846 MΩ
AP 1 Delay Mean 34.6100 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 98.5500 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 64.2200 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean 0.0000 %
Steady State Accommodation Mean 0.0000 %
Accommodation Rate to Steady State 0.0000 %/ms
Accommodation at Steady State Mean -16.4950 %
Accommodation Rate Mean at Steady State 1292.7532 ms
ISI CV 24.1558
ISI Median 70.1500 ms
ISI Burst Mean Change 0.8758 %
Spike Rate (Strong Stimulation) 28.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 12.6900 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 45.1900 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 32.9100 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2118.3800 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 83.6634 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 7191.39 µm2
Number of Stems 7.0
Number of Bifurcations 18.0
Number of Branches 42.0
Overall Width 248.792 µm
Overall Height 311.565 µm
Overall Depth 164.29 µm
Average Diameter 1.02019 µm
Total Length 2630.84 µm
Total Surface 6317.2 µm2
Total Volume 3274.81 µm3
Max Euclidean Distance 220.93 µm
Max Path Distance 235.24 µm
Max Branch Order 5.0
Average Contraction 0.971545
Total Fragmentation 660.0
Partition Asymmetry 0.477778
Average Rall's Ratio 1.40875
Average Bifurcation Angle Local 30.3296 °
Average Bifurcation Angle Remote 38.2594 °
Fractal Dimension 1.0048
Complexity Summary
Relative Complexity 279.58 HH
State Equations 1241
Optimal Time-Step 0.00772 ms
Model Size
Sections 44
Compartments 122
State Equations 1241
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14925 Hz
CVODE Steps Per AP 453
CVODE Benchmark Run Time 279.58 HH
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