Layer 2/3 Continuous Non-accommodating Bipolar Cell (5)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Bipolar Cell
Keywords: continuous non-accommodating,Layer 2, Layer 3, Layer 2/3,GABAergic, inhibitory, neocortex, rat, somatosensory cortex, bipolar, biophysical, continuous non-accommodating bipolar cell, Realistic Network, Neuron or other electrically excitable cell, Synapse, Spatio-temporal Activity Patterns, Detailed Neuronal Models
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000786
cNAC187_L23_BP_a9d486b0d6_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000786
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Non-accommodating Regular Spikers (naRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -69.20 mV
Rheobase Current Interval (0.00847, 0.00870] nA
Threshold Current Interval (0.00000, 0.05859] nA
Bias Current (to -80.00 mV) -0.0092 nA
Testing Temperature 34.0 °C
Stability Interval [-0.3125, 15.0] nA
AP 1-2 Amplitude Drop 0.1390 mV
AP 1 Steady State Amplitude Change 0.2229 mV
AP 1 Amplitude 79.3423 mV
AP 1 Width at Half Height 0.5600 ms
AP 1 Width (Peak To Trough) 4.2700 ms
AP 1 Rate of Change Peak to Trough -24.5633 mV/ms
AP 1 AHP Depth 25.5432 mV
AP2 Amplitude 79.2032 mV
AP2 Width at Half Height 0.5600 ms
AP 2 Width (Peak to Trough) 4.3700 ms
AP 2 Rate of Change Peak to Trough -23.9537 mV/ms
AP 2 AHP Depth 25.4746 mV
AP 1-2 Amplitude Change Percent -0.1752 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -2.4818 %
AP 1-2 AHP Depth Percent Change -0.2686 %
Input Resistance 1121.0823 MΩ
AP 1 Delay Mean 22.9200 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 74.1000 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 51.5300 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -12.5000 %
Steady State Accommodation Mean -25.0000 %
Accommodation Rate to Steady State -0.0221 %/ms
Accommodation at Steady State Mean -32.7110 %
Accommodation Rate Mean at Steady State 1147.7357 ms
ISI CV 10.5113
ISI Median 63.4300 ms
ISI Burst Mean Change 1.3677 %
Spike Rate (Strong Stimulation) 30.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 8.6300 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 36.9600 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 28.6600 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2140.2400 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 38.9067 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 2271.45 µm2
Number of Stems 3.0
Number of Bifurcations 6.0
Number of Branches 14.0
Overall Width 56.4498 µm
Overall Height 260.336 µm
Overall Depth 21.85 µm
Average Diameter 1.24674 µm
Total Length 685.203 µm
Total Surface 1830.86 µm2
Total Volume 878.511 µm3
Max Euclidean Distance 155.627 µm
Max Path Distance 181.899 µm
Max Branch Order 3.0
Average Contraction 0.978979
Total Fragmentation 201.0
Partition Asymmetry 0.666667
Average Rall's Ratio 2.385
Average Bifurcation Angle Local 44.8606 °
Average Bifurcation Angle Remote 38.4275 °
Fractal Dimension 1.00294
Complexity Summary
Relative Complexity 78.00 HH
State Equations 351
Optimal Time-Step 0.00772 ms
Model Size
Sections 15
Compartments 33
State Equations 351
Variable Time-Step Complexity
CVODE Steady State Step Frequency 15345 Hz
CVODE Steps Per AP 453
CVODE Benchmark Run Time 78.00 HH
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