Layer 5 Continuous Accommodating Bitufted Cell (5)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 5
Keywords: continuous accommodating,Layer 5,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000561
cACint209_L5_BTC_a4bce5d682_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000561
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Delayed Regular Spikers (dRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.56 mV
Rheobase Current Interval (0.01648, 0.01785] nA
Threshold Current Interval (0.29297, 0.35156] nA
Bias Current (to -80.00 mV) -0.0122 nA
Testing Temperature 34.0 °C
Stability Interval [-2.1875, 15.0] nA
AP 1-2 Amplitude Drop 0.3241 mV
AP 1 Steady State Amplitude Change 0.9796 mV
AP 1 Amplitude 77.5914 mV
AP 1 Width at Half Height 0.6900 ms
AP 1 Width (Peak To Trough) 3.3200 ms
AP 1 Rate of Change Peak to Trough -25.9121 mV/ms
AP 1 AHP Depth 8.4367 mV
AP2 Amplitude 77.2673 mV
AP2 Width at Half Height 0.6800 ms
AP 2 Width (Peak to Trough) 3.3200 ms
AP 2 Rate of Change Peak to Trough -25.9202 mV/ms
AP 2 AHP Depth 8.7877 mV
AP 1-2 Amplitude Change Percent -0.4177 %
AP 1-2 Half Width Change Percent -1.4493 %
AP 1-2 Rate of Change Peak to Trough Percent Change 0.0312 %
AP 1-2 AHP Depth Percent Change 4.1598 %
Input Resistance 0.7311 MΩ
AP 1 Delay Mean 85.4100 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 142.8900 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 59.1200 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -20.0000 %
Steady State Accommodation Mean -20.0000 %
Accommodation Rate to Steady State -0.0194 %/ms
Accommodation at Steady State Mean -58.9003 %
Accommodation Rate Mean at Steady State 522.6588 ms
ISI CV 4.3984
ISI Median 112.5300 ms
ISI Burst Mean Change 5.7063 %
Spike Rate (Strong Stimulation) 18.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 30.7000 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 53.2200 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 23.7250 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2094.4200 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 101.7538 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 7585.86 µm2
Number of Stems 6.0
Number of Bifurcations 66.0
Number of Branches 137.0
Overall Width 312.27 µm
Overall Height 368.964 µm
Overall Depth 335.98 µm
Average Diameter 0.667955 µm
Total Length 5733.57 µm
Total Surface 10926.8 µm2
Total Volume 4106.38 µm3
Max Euclidean Distance 296.777 µm
Max Path Distance 392.142 µm
Max Branch Order 8.0
Average Contraction 0.941831
Total Fragmentation 5312.0
Partition Asymmetry 0.44936
Average Rall's Ratio 0.819894
Average Bifurcation Angle Local 25.1192 °
Average Bifurcation Angle Remote 57.4748 °
Fractal Dimension 1.01535
Complexity Summary
State Equations 2941
Optimal Time-Step 0.00535 ms
Relative Complexity 1055.57 HH
Model Size
Sections 138
Compartments 292
State Equations 2941
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00535 ms
Optimal Time-Step Error 0.23 %
Optimal Time-Step Benchmark Run Time 1055.57 HH
 
Maximum Stable Time-Step 0.03125 ms
Maximum Stable Time-Step Error 0.74 %
Max. Stable Time-Step Benchmark Run Time 2822.91 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14776 Hz
CVODE Steps Per AP 398
CVODE Benchmark Run Time 696.45 HH
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