Layer 5 Continuous Accommodating Bitufted Cell (4)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 5
Keywords: continuous accommodating,Layer 5,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000560
cACint209_L5_BTC_7412fd9a84_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000560
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Delayed Regular Spikers (dRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -69.05 mV
Rheobase Current Interval (0.02060, 0.02197] nA
Threshold Current Interval (0.29297, 0.35156] nA
Bias Current (to -80.00 mV) -0.0225 nA
Testing Temperature 34.0 °C
Stability Interval [-2.8125, 15.0] nA
AP 1-2 Amplitude Drop -0.0662 mV
AP 1 Steady State Amplitude Change 0.3801 mV
AP 1 Amplitude 80.2812 mV
AP 1 Width at Half Height 0.6500 ms
AP 1 Width (Peak To Trough) 3.3700 ms
AP 1 Rate of Change Peak to Trough -27.8214 mV/ms
AP 1 AHP Depth 13.4770 mV
AP2 Amplitude 80.3474 mV
AP2 Width at Half Height 0.6500 ms
AP 2 Width (Peak to Trough) 3.3700 ms
AP 2 Rate of Change Peak to Trough -27.8376 mV/ms
AP 2 AHP Depth 13.4651 mV
AP 1-2 Amplitude Change Percent 0.0825 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change 0.0579 %
AP 1-2 AHP Depth Percent Change -0.0884 %
Input Resistance 518.2801 MΩ
AP 1 Delay Mean 85.3800 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 162.3400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 78.5650 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -25.0000 %
Steady State Accommodation Mean -25.0000 %
Accommodation Rate to Steady State -0.0206 %/ms
Accommodation at Steady State Mean -50.7513 %
Accommodation Rate Mean at Steady State 831.6544 ms
ISI CV 5.4164
ISI Median 118.7750 ms
ISI Burst Mean Change 4.1710 %
Spike Rate (Strong Stimulation) 18.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 28.5200 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 55.6600 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 27.8150 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2133.0600 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 78.0815 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 11565.8 µm2
Number of Stems 4.0
Number of Bifurcations 66.0
Number of Branches 135.0
Overall Width 491.813 µm
Overall Height 880.91 µm
Overall Depth 159.67 µm
Average Diameter 1.07778 µm
Total Length 4177.72 µm
Total Surface 14264.1 µm2
Total Volume 7962.28 µm3
Max Euclidean Distance 802.427 µm
Max Path Distance 842.616 µm
Max Branch Order 15.0
Average Contraction 0.933397
Total Fragmentation 4168.0
Partition Asymmetry 0.675002
Average Rall's Ratio 1.32878
Average Bifurcation Angle Local 39.323 °
Average Bifurcation Angle Remote 77.0352 °
Fractal Dimension 1.01762
Complexity Summary
State Equations 2581
Optimal Time-Step 0.00772 ms
Relative Complexity 652.21 HH
Model Size
Sections 134
Compartments 256
State Equations 2581
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00772 ms
Optimal Time-Step Error 0.09 %
Optimal Time-Step Benchmark Run Time 652.21 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.94 %
Max. Stable Time-Step Benchmark Run Time 1258.23 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 13976 Hz
CVODE Steps Per AP 400
CVODE Benchmark Run Time 594.97 HH
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