Layer 4 Continuous Accommodating Bitufted Cell (1)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 4
Keywords: continuous accommodating,Layer 4,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000512
cACint209_L4_BTC_04273604d2_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000512
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Delayed Regular Spikers (dRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.89 mV
Rheobase Current Interval (0.01282, 0.01373] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0104 nA
Testing Temperature 34.0 °C
Stability Interval [-1.5625, 15.0] nA
AP 1-2 Amplitude Drop -0.2164 mV
AP 1 Steady State Amplitude Change 0.1292 mV
AP 1 Amplitude 86.4101 mV
AP 1 Width at Half Height 0.5900 ms
AP 1 Width (Peak To Trough) 3.4800 ms
AP 1 Rate of Change Peak to Trough -29.5800 mV/ms
AP 1 AHP Depth 16.5285 mV
AP2 Amplitude 86.6265 mV
AP2 Width at Half Height 0.5900 ms
AP 2 Width (Peak to Trough) 3.4300 ms
AP 2 Rate of Change Peak to Trough -30.0200 mV/ms
AP 2 AHP Depth 16.3422 mV
AP 1-2 Amplitude Change Percent 0.2505 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change 1.4874 %
AP 1-2 AHP Depth Percent Change -1.1271 %
Input Resistance 897.1108 MΩ
AP 1 Delay Mean 84.0500 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 172.8000 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 91.0900 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -25.0000 %
Steady State Accommodation Mean -25.0000 %
Accommodation Rate to Steady State -0.0190 %/ms
Accommodation at Steady State Mean -52.0434 %
Accommodation Rate Mean at Steady State 790.8687 ms
ISI CV 5.1265
ISI Median 142.2350 ms
ISI Burst Mean Change 5.2732 %
Spike Rate (Strong Stimulation) 15.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 28.5400 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 60.5000 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 32.9800 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2143.8100 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 77.2695 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 6347.0 µm2
Number of Stems 4.0
Number of Bifurcations 24.0
Number of Branches 51.0
Overall Width 309.44 µm
Overall Height 530.308 µm
Overall Depth 260.54 µm
Average Diameter 0.684545 µm
Total Length 3840.18 µm
Total Surface 7431.89 µm2
Total Volume 2841.05 µm3
Max Euclidean Distance 470.736 µm
Max Path Distance 525.578 µm
Max Branch Order 5.0
Average Contraction 0.95441
Total Fragmentation 1476.0
Partition Asymmetry 0.468452
Average Rall's Ratio 1.06357
Average Bifurcation Angle Local 57.4964 °
Average Bifurcation Angle Remote 78.3312 °
Fractal Dimension 1.00705
Complexity Summary
State Equations 1941
Optimal Time-Step 0.00764 ms
Relative Complexity 448.22 HH
Model Size
Sections 52
Compartments 192
State Equations 1941
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00764 ms
Optimal Time-Step Error 0.03 %
Optimal Time-Step Benchmark Run Time 448.22 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 0.44 %
Max. Stable Time-Step Benchmark Run Time 856.26 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 15137 Hz
CVODE Steps Per AP 395
CVODE Benchmark Run Time 430.00 HH
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