Layer 2/3 Continuous Accommodating Bitufted Cell (5)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: continuous accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted, biophysical, continuous accommodating bitufted cell, Realistic Network, Neuron or other electrically excitable cell, Synapse, Spatio-temporal Activity Patterns, Detailed Neuronal Models
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000471
cACint209_L23_BTC_c745595fbe_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000471
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Delayed Regular Spikers (dRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.25 mV
Rheobase Current Interval (0.01648, 0.01785] nA
Threshold Current Interval (0.29297, 0.35156] nA
Bias Current (to -80.00 mV) -0.0163 nA
Testing Temperature 34.0 °C
Stability Interval [-2.1875, 15.0] nA
AP 1-2 Amplitude Drop 0.0219 mV
AP 1 Steady State Amplitude Change 0.5072 mV
AP 1 Amplitude 84.6232 mV
AP 1 Width at Half Height 0.5700 ms
AP 1 Width (Peak To Trough) 2.3200 ms
AP 1 Rate of Change Peak to Trough -43.7416 mV/ms
AP 1 AHP Depth 16.8574 mV
AP2 Amplitude 84.6013 mV
AP2 Width at Half Height 0.5700 ms
AP 2 Width (Peak to Trough) 2.3200 ms
AP 2 Rate of Change Peak to Trough -43.7482 mV/ms
AP 2 AHP Depth 16.8946 mV
AP 1-2 Amplitude Change Percent -0.0259 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change 0.0150 %
AP 1-2 AHP Depth Percent Change 0.2203 %
Input Resistance 624.2748 MΩ
AP 1 Delay Mean 105.4300 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 203.3400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 99.7850 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean 0.0000 %
Steady State Accommodation Mean 0.0000 %
Accommodation Rate to Steady State 0.0000 %/ms
Accommodation at Steady State Mean -44.8255 %
Accommodation Rate Mean at Steady State 1008.1513 ms
ISI CV 6.5829
ISI Median 136.9100 ms
ISI Burst Mean Change 3.8300 %
Spike Rate (Strong Stimulation) 16.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 36.0000 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 69.8800 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 34.8000 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2159.7300 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 120.1830 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 8729.2 µm2
Number of Stems 4.0
Number of Bifurcations 31.0
Number of Branches 65.0
Overall Width 384.926 µm
Overall Height 500.534 µm
Overall Depth 346.27 µm
Average Diameter 0.786662 µm
Total Length 4998.09 µm
Total Surface 12860.5 µm2
Total Volume 5282.53 µm3
Max Euclidean Distance 317.358 µm
Max Path Distance 392.535 µm
Max Branch Order 7.0
Average Contraction 0.956001
Total Fragmentation 3591.0
Partition Asymmetry 0.402381
Average Rall's Ratio 1.09618
Average Bifurcation Angle Local 13.8025 °
Average Bifurcation Angle Remote 49.7056 °
Fractal Dimension 1.00953
Complexity Summary
Relative Complexity 537.95 HH
State Equations 2461
Optimal Time-Step 0.00769 ms
Model Size
Sections 66
Compartments 244
State Equations 2461
Variable Time-Step Complexity
CVODE Steady State Step Frequency 15082 Hz
CVODE Steps Per AP 288
CVODE Benchmark Run Time 537.95 HH
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