Layer 2/3 Continuous Accommodating Bitufted Cell (4)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: continuous accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted, biophysical, continuous accommodating bitufted cell, Realistic Network, Neuron or other electrically excitable cell, Synapse, Spatio-temporal Activity Patterns, Detailed Neuronal Models
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000470
cACint209_L23_BTC_acb33d4029_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000470
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Regular Spikers (RS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.28 mV
Rheobase Current Interval (0.01785, 0.01923] nA
Threshold Current Interval (0.29297, 0.35156] nA
Bias Current (to -80.00 mV) -0.0142 nA
Testing Temperature 34.0 °C
Stability Interval [-2.8125, 15.0] nA
AP 1-2 Amplitude Drop 5.6031 mV
AP 1 Steady State Amplitude Change 0.4635 mV
AP 1 Amplitude 68.0243 mV
AP 1 Width at Half Height 0.7100 ms
AP 1 Width (Peak To Trough) 4.3000 ms
AP 1 Rate of Change Peak to Trough -17.9114 mV/ms
AP 1 AHP Depth 8.9949 mV
AP2 Amplitude 62.4212 mV
AP2 Width at Half Height 0.7300 ms
AP 2 Width (Peak to Trough) 5.1000 ms
AP 2 Rate of Change Peak to Trough -14.0941 mV/ms
AP 2 AHP Depth 9.4585 mV
AP 1-2 Amplitude Change Percent -8.2369 %
AP 1-2 Half Width Change Percent 2.8169 %
AP 1-2 Rate of Change Peak to Trough Percent Change -21.3125 %
AP 1-2 AHP Depth Percent Change 5.1540 %
Input Resistance 700.2251 MΩ
AP 1 Delay Mean 85.5500 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 153.5400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 65.5450 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -25.0000 %
Steady State Accommodation Mean -25.0000 %
Accommodation Rate to Steady State -0.0351 %/ms
Accommodation at Steady State Mean -66.5010 %
Accommodation Rate Mean at Steady State 306.4488 ms
ISI CV 3.8245
ISI Median 157.9250 ms
ISI Burst Mean Change -7.1922 %
Spike Rate (Strong Stimulation) 19.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 28.5600 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 49.4000 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 22.4500 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2056.1000 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 135.2535 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 7924.58 µm2
Number of Stems 7.0
Number of Bifurcations 38.0
Number of Branches 82.0
Overall Width 278.862 µm
Overall Height 691.342 µm
Overall Depth 207.92 µm
Average Diameter 0.932168 µm
Total Length 4400.67 µm
Total Surface 11366.5 µm2
Total Volume 4943.2 µm3
Max Euclidean Distance 518.613 µm
Max Path Distance 549.386 µm
Max Branch Order 8.0
Average Contraction 0.957766
Total Fragmentation 1155.0
Partition Asymmetry 0.439641
Average Rall's Ratio 1.13643
Average Bifurcation Angle Local 22.4702 °
Average Bifurcation Angle Remote 51.609 °
Fractal Dimension 1.00818
Complexity Summary
Relative Complexity 495.72 HH
State Equations 2271
Optimal Time-Step 0.01023 ms
Model Size
Sections 83
Compartments 225
State Equations 2271
Variable Time-Step Complexity
CVODE Steady State Step Frequency 15638 Hz
CVODE Steps Per AP 276
CVODE Benchmark Run Time 495.72 HH
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