Layer 2/3 Continuous Accommodating Bitufted Cell (2)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: continuous accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000468
cACint209_L23_BTC_4f730ef7d0_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000468
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Delayed Regular Spikers (dRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.80 mV
Rheobase Current Interval (0.01190, 0.01282] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0093 nA
Testing Temperature 34.0 °C
Stability Interval [-1.5625, 15.0] nA
AP 1-2 Amplitude Drop -0.0285 mV
AP 1 Steady State Amplitude Change 0.5116 mV
AP 1 Amplitude 83.5869 mV
AP 1 Width at Half Height 0.6400 ms
AP 1 Width (Peak To Trough) 3.7800 ms
AP 1 Rate of Change Peak to Trough -26.3010 mV/ms
AP 1 AHP Depth 15.8307 mV
AP2 Amplitude 83.6154 mV
AP2 Width at Half Height 0.6400 ms
AP 2 Width (Peak to Trough) 3.7800 ms
AP 2 Rate of Change Peak to Trough -26.3130 mV/ms
AP 2 AHP Depth 15.8476 mV
AP 1-2 Amplitude Change Percent 0.0341 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change 0.0457 %
AP 1-2 AHP Depth Percent Change 0.1067 %
Input Resistance 1023.9928 MΩ
AP 1 Delay Mean 81.5300 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 168.6600 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 89.1550 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -25.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.0399 %/ms
Accommodation at Steady State Mean -51.3640 %
Accommodation Rate Mean at Steady State 856.6226 ms
ISI CV 5.3038
ISI Median 134.2700 ms
ISI Burst Mean Change 4.6482 %
Spike Rate (Strong Stimulation) 15.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 28.3200 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 60.5800 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 33.2050 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2116.3000 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 81.5089 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 5266.17 µm2
Number of Stems 3.0
Number of Bifurcations 21.0
Number of Branches 44.0
Overall Width 234.08 µm
Overall Height 778.276 µm
Overall Depth 275.32 µm
Average Diameter 0.77755 µm
Total Length 3237.9 µm
Total Surface 7016.1 µm2
Total Volume 2648.81 µm3
Max Euclidean Distance 562.007 µm
Max Path Distance 595.242 µm
Max Branch Order 7.0
Average Contraction 0.961441
Total Fragmentation 969.0
Partition Asymmetry 0.526757
Average Rall's Ratio 1.21222
Average Bifurcation Angle Local 49.4931 °
Average Bifurcation Angle Remote 56.4973 °
Fractal Dimension 1.00718
Complexity Summary
State Equations 1671
Optimal Time-Step 0.00762 ms
Relative Complexity 395.86 HH
Model Size
Sections 45
Compartments 165
State Equations 1671
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00762 ms
Optimal Time-Step Error 0.06 %
Optimal Time-Step Benchmark Run Time 395.86 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 0.69 %
Max. Stable Time-Step Benchmark Run Time 754.21 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14970 Hz
CVODE Steps Per AP 401
CVODE Benchmark Run Time 376.66 HH
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