Layer 2/3 Burst Non-accommodating Bitufted Cell (5)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: burst non-accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000301
bNAC219_L23_BTC_f83ba90238_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000301
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Regular Spikers (RS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.63 mV
Rheobase Current Interval (0.03571, 0.03662] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0201 nA
Testing Temperature 34.0 °C
Stability Interval [-1.25, 15.0] nA
AP 1-2 Amplitude Drop 0.0590 mV
AP 1 Steady State Amplitude Change 3.4728 mV
AP 1 Amplitude 71.6231 mV
AP 1 Width at Half Height 0.5100 ms
AP 1 Width (Peak To Trough) 2.3400 ms
AP 1 Rate of Change Peak to Trough -39.5869 mV/ms
AP 1 AHP Depth 21.0102 mV
AP2 Amplitude 71.5641 mV
AP2 Width at Half Height 0.5000 ms
AP 2 Width (Peak to Trough) 2.3400 ms
AP 2 Rate of Change Peak to Trough -39.5986 mV/ms
AP 2 AHP Depth 21.0966 mV
AP 1-2 Amplitude Change Percent -0.0824 %
AP 1-2 Half Width Change Percent -1.9608 %
AP 1-2 Rate of Change Peak to Trough Percent Change 0.0295 %
AP 1-2 AHP Depth Percent Change 0.4109 %
Input Resistance 468.9090 MΩ
AP 1 Delay Mean 22.1800 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 51.3400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 30.6050 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -28.5714 %
Steady State Accommodation Mean -28.5714 %
Accommodation Rate to Steady State -0.0811 %/ms
Accommodation at Steady State Mean -77.3842 %
Accommodation Rate Mean at Steady State 142.4394 ms
ISI CV 4.1191
ISI Median 90.5400 ms
ISI Burst Mean Change 9.9108 %
Spike Rate (Strong Stimulation) 37.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 6.7400 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 19.9300 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 13.5450 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2037.7300 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 93.6873 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 7088.89 µm2
Number of Stems 4.0
Number of Bifurcations 15.0
Number of Branches 33.0
Overall Width 315.584 µm
Overall Height 564.426 µm
Overall Depth 152.51 µm
Average Diameter 0.930097 µm
Total Length 2485.69 µm
Total Surface 5567.42 µm2
Total Volume 2884.54 µm3
Max Euclidean Distance 367.319 µm
Max Path Distance 499.681 µm
Max Branch Order 4.0
Average Contraction 0.966464
Total Fragmentation 711.0
Partition Asymmetry 0.444444
Average Rall's Ratio 0.9825
Average Bifurcation Angle Local 42.1604 °
Average Bifurcation Angle Remote 63.0568 °
Fractal Dimension 1.00425
Complexity Summary
State Equations 1261
Optimal Time-Step 0.00771 ms
Relative Complexity 288.25 HH
Model Size
Sections 34
Compartments 124
State Equations 1261
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00771 ms
Optimal Time-Step Error 0.29 %
Optimal Time-Step Benchmark Run Time 288.25 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.92 %
Max. Stable Time-Step Benchmark Run Time 555.41 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 12752 Hz
CVODE Steps Per AP 454
CVODE Benchmark Run Time 252.65 HH
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