Layer 2/3 Burst Non-accommodating Bitufted Cell (3)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: burst non-accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000299
bNAC219_L23_BTC_38a5da4025_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000299
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Regular Spikers (RS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.76 mV
Rheobase Current Interval (0.03090, 0.03204] nA
Threshold Current Interval (0.23438, 0.29297] nA
Bias Current (to -80.00 mV) -0.0187 nA
Testing Temperature 34.0 °C
Stability Interval [-1.875, 15.0] nA
AP 1-2 Amplitude Drop -0.4140 mV
AP 1 Steady State Amplitude Change 2.1777 mV
AP 1 Amplitude 63.5602 mV
AP 1 Width at Half Height 0.6600 ms
AP 1 Width (Peak To Trough) 4.0800 ms
AP 1 Rate of Change Peak to Trough -19.9289 mV/ms
AP 1 AHP Depth 17.7496 mV
AP2 Amplitude 63.9743 mV
AP2 Width at Half Height 0.6600 ms
AP 2 Width (Peak to Trough) 4.1200 ms
AP 2 Rate of Change Peak to Trough -19.7284 mV/ms
AP 2 AHP Depth 17.3070 mV
AP 1-2 Amplitude Change Percent 0.6514 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -1.0058 %
AP 1-2 AHP Depth Percent Change -2.4939 %
Input Resistance 501.4941 MΩ
AP 1 Delay Mean 30.6100 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 70.9800 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 42.1450 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -33.3333 %
Steady State Accommodation Mean -33.3333 %
Accommodation Rate to Steady State -0.0782 %/ms
Accommodation at Steady State Mean -68.7619 %
Accommodation Rate Mean at Steady State 179.2910 ms
ISI CV 4.4636
ISI Median 101.0800 ms
ISI Burst Mean Change 8.7937 %
Spike Rate (Strong Stimulation) 25.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 10.7200 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 28.5600 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 18.3850 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2062.9700 ms
Frequency Filter Type Constant
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 7191.39 µm2
Number of Stems 7.0
Number of Bifurcations 18.0
Number of Branches 42.0
Overall Width 170.805 µm
Overall Height 351.668 µm
Overall Depth 208.12 µm
Average Diameter 1.01986 µm
Total Length 2706.59 µm
Total Surface 6390.34 µm2
Total Volume 3272.08 µm3
Max Euclidean Distance 239.213 µm
Max Path Distance 255.698 µm
Max Branch Order 5.0
Average Contraction 0.972046
Total Fragmentation 660.0
Partition Asymmetry 0.477778
Average Rall's Ratio 1.40875
Average Bifurcation Angle Local 32.6979 °
Average Bifurcation Angle Remote 39.9837 °
Fractal Dimension 1.00466
Complexity Summary
State Equations 1381
Optimal Time-Step 0.00772 ms
Relative Complexity 323.68 HH
Model Size
Sections 44
Compartments 136
State Equations 1381
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00772 ms
Optimal Time-Step Error 0.29 %
Optimal Time-Step Benchmark Run Time 323.68 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 2.19 %
Max. Stable Time-Step Benchmark Run Time 624.89 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14385 Hz
CVODE Steps Per AP 324
CVODE Benchmark Run Time 289.85 HH
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