Layer 2/3 Burst Non-accommodating Bitufted Cell (2)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: burst non-accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000298
bNAC219_L23_BTC_08c8d4004b_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000298
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Regular Spikers (RS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -69.28 mV
Rheobase Current Interval (0.02014, 0.02106] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0217 nA
Testing Temperature 34.0 °C
Stability Interval [-1.875, 15.0] nA
AP 1-2 Amplitude Drop -0.1758 mV
AP 1 Steady State Amplitude Change 1.8054 mV
AP 1 Amplitude 64.6312 mV
AP 1 Width at Half Height 0.7000 ms
AP 1 Width (Peak To Trough) 3.0000 ms
AP 1 Rate of Change Peak to Trough -25.6700 mV/ms
AP 1 AHP Depth 12.3787 mV
AP2 Amplitude 64.8070 mV
AP2 Width at Half Height 0.7100 ms
AP 2 Width (Peak to Trough) 3.0300 ms
AP 2 Rate of Change Peak to Trough -25.3965 mV/ms
AP 2 AHP Depth 12.1445 mV
AP 1-2 Amplitude Change Percent 0.2720 %
AP 1-2 Half Width Change Percent 1.4286 %
AP 1-2 Rate of Change Peak to Trough Percent Change -1.0653 %
AP 1-2 AHP Depth Percent Change -1.8923 %
Input Resistance 537.9127 MΩ
AP 1 Delay Mean 50.4900 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 101.5400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 53.0150 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -33.3333 %
Steady State Accommodation Mean -33.3333 %
Accommodation Rate to Steady State -0.0570 %/ms
Accommodation at Steady State Mean -58.9367 %
Accommodation Rate Mean at Steady State 240.3892 ms
ISI CV 5.1087
ISI Median 106.2450 ms
ISI Burst Mean Change 7.6983 %
Spike Rate (Strong Stimulation) 22.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 17.0800 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 36.2300 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 19.8050 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2083.5700 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 122.5347 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 3382.09 µm2
Number of Stems 6.0
Number of Bifurcations 26.0
Number of Branches 57.0
Overall Width 282.722 µm
Overall Height 431.95 µm
Overall Depth 209.87 µm
Average Diameter 0.586381 µm
Total Length 4403.92 µm
Total Surface 7976.19 µm2
Total Volume 2228.93 µm3
Max Euclidean Distance 323.875 µm
Max Path Distance 384.008 µm
Max Branch Order 5.0
Average Contraction 0.955257
Total Fragmentation 2065.0
Partition Asymmetry 0.447086
Average Rall's Ratio 1.19857
Average Bifurcation Angle Local 52.2924 °
Average Bifurcation Angle Remote 71.0928 °
Fractal Dimension 1.00699
Complexity Summary
State Equations 2261
Optimal Time-Step 0.00783 ms
Relative Complexity 498.87 HH
Model Size
Sections 58
Compartments 224
State Equations 2261
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00783 ms
Optimal Time-Step Error 0.33 %
Optimal Time-Step Benchmark Run Time 498.87 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.56 %
Max. Stable Time-Step Benchmark Run Time 976.45 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14115 Hz
CVODE Steps Per AP 329
CVODE Benchmark Run Time 447.13 HH
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