Layer 2/3 Burst Non-accommodating Bitufted Cell (1)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: burst non-accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000297
bNAC219_L23_BTC_07c7c10a30_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000297
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Regular Spikers (RS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -69.56 mV
Rheobase Current Interval (0.03777, 0.03891] nA
Threshold Current Interval (0.23438, 0.29297] nA
Bias Current (to -80.00 mV) -0.0335 nA
Testing Temperature 34.0 °C
Stability Interval [-2.5, 15.0] nA
AP 1-2 Amplitude Drop 0.2460 mV
AP 1 Steady State Amplitude Change 2.0202 mV
AP 1 Amplitude 66.2757 mV
AP 1 Width at Half Height 0.5700 ms
AP 1 Width (Peak To Trough) 2.1900 ms
AP 1 Rate of Change Peak to Trough -37.5036 mV/ms
AP 1 AHP Depth 15.8572 mV
AP2 Amplitude 66.0297 mV
AP2 Width at Half Height 0.5800 ms
AP 2 Width (Peak to Trough) 2.1900 ms
AP 2 Rate of Change Peak to Trough -37.4900 mV/ms
AP 2 AHP Depth 16.0734 mV
AP 1-2 Amplitude Change Percent -0.3712 %
AP 1-2 Half Width Change Percent 1.7544 %
AP 1-2 Rate of Change Peak to Trough Percent Change -0.0364 %
AP 1-2 AHP Depth Percent Change 1.3630 %
Input Resistance 324.6595 MΩ
AP 1 Delay Mean 39.9000 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 81.6800 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 43.3050 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -42.8571 %
Steady State Accommodation Mean -42.8571 %
Accommodation Rate to Steady State -0.0873 %/ms
Accommodation at Steady State Mean -64.2851 %
Accommodation Rate Mean at Steady State 215.8940 ms
ISI CV 4.6934
ISI Median 95.5550 ms
ISI Burst Mean Change 7.3001 %
Spike Rate (Strong Stimulation) 25.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 12.9500 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 29.2500 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 16.7950 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2068.1600 ms
Frequency Filter Type Constant
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 8729.19 µm2
Number of Stems 4.0
Number of Bifurcations 31.0
Number of Branches 65.0
Overall Width 362.945 µm
Overall Height 441.271 µm
Overall Depth 330.66 µm
Average Diameter 0.786773 µm
Total Length 4601.41 µm
Total Surface 11875.0 µm2
Total Volume 5038.08 µm3
Max Euclidean Distance 315.55 µm
Max Path Distance 405.552 µm
Max Branch Order 7.0
Average Contraction 0.955826
Total Fragmentation 3591.0
Partition Asymmetry 0.402381
Average Rall's Ratio 1.09618
Average Bifurcation Angle Local 15.4019 °
Average Bifurcation Angle Remote 49.7311 °
Fractal Dimension 1.00966
Complexity Summary
State Equations 2241
Optimal Time-Step 0.00768 ms
Relative Complexity 508.13 HH
Model Size
Sections 66
Compartments 222
State Equations 2241
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00768 ms
Optimal Time-Step Error 0.40 %
Optimal Time-Step Benchmark Run Time 508.13 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.73 %
Max. Stable Time-Step Benchmark Run Time 975.31 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 13792 Hz
CVODE Steps Per AP 350
CVODE Benchmark Run Time 443.80 HH
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