Layer 6 Burst Accommodating Bitufted Cell (3)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 6
Keywords: burst accommodating,Layer 6,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000174
bAC217_L6_BTC_9e335e53f6_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000174
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -72.84 mV
Rheobase Current Interval (0.08698, 0.08812] nA
Threshold Current Interval (0.23438, 0.29297] nA
Bias Current (to -80.00 mV) -0.0221 nA
Testing Temperature 34.0 °C
Stability Interval [-0.9375, 15.0] nA
AP 1-2 Amplitude Drop 3.5471 mV
AP 1 Steady State Amplitude Change 5.2795 mV
AP 1 Amplitude 78.8668 mV
AP 1 Width at Half Height 0.4500 ms
AP 1 Width (Peak To Trough) 2.6800 ms
AP 1 Rate of Change Peak to Trough -37.5231 mV/ms
AP 1 AHP Depth 21.6951 mV
AP2 Amplitude 75.3197 mV
AP2 Width at Half Height 0.4700 ms
AP 2 Width (Peak to Trough) 2.7300 ms
AP 2 Rate of Change Peak to Trough -35.4151 mV/ms
AP 2 AHP Depth 21.3635 mV
AP 1-2 Amplitude Change Percent -4.4976 %
AP 1-2 Half Width Change Percent 4.4444 %
AP 1-2 Rate of Change Peak to Trough Percent Change -5.6179 %
AP 1-2 AHP Depth Percent Change -1.5285 %
Input Resistance 305.7489 MΩ
AP 1 Delay Mean 9.6900 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 46.4900 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 41.4250 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -60.0000 %
Steady State Accommodation Mean -60.0000 %
Accommodation Rate to Steady State -0.1510 %/ms
Accommodation at Steady State Mean -85.6688 %
Accommodation Rate Mean at Steady State 145.0751 ms
ISI CV 3.1487
ISI Median 169.4100 ms
ISI Burst Mean Change 25.1359 %
Spike Rate (Strong Stimulation) 13.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 3.4100 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 24.0000 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 21.7500 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2046.7400 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 60.1849 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 10030.0 µm2
Number of Stems 4.0
Number of Bifurcations 34.0
Number of Branches 71.0
Overall Width 436.209 µm
Overall Height 583.448 µm
Overall Depth 292.79 µm
Average Diameter 0.681103 µm
Total Length 6203.03 µm
Total Surface 8361.9 µm2
Total Volume 4200.13 µm3
Max Euclidean Distance 426.389 µm
Max Path Distance 507.81 µm
Max Branch Order 7.0
Average Contraction 0.96007
Total Fragmentation 2481.0
Partition Asymmetry 0.346257
Average Rall's Ratio 1.06735
Average Bifurcation Angle Local 9.081 °
Average Bifurcation Angle Remote 40.6276 °
Fractal Dimension 1.01071
Complexity Summary
State Equations 3121
Optimal Time-Step 0.00785 ms
Relative Complexity 791.30 HH
Model Size
Sections 72
Compartments 310
State Equations 3121
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00785 ms
Optimal Time-Step Error 0.17 %
Optimal Time-Step Benchmark Run Time 791.30 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.36 %
Max. Stable Time-Step Benchmark Run Time 1552.48 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 12984 Hz
CVODE Steps Per AP 681
CVODE Benchmark Run Time 808.53 HH
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