Layer 5 Burst Accommodating Bitufted Cell (1)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 5
Keywords: burst accommodating,Layer 5,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000142
bAC217_L5_BTC_160272643a_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000142
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -71.26 mV
Rheobase Current Interval (0.04578, 0.04692] nA
Threshold Current Interval (0.23438, 0.29297] nA
Bias Current (to -80.00 mV) -0.0209 nA
Testing Temperature 34.0 °C
Stability Interval [-1.875, 15.0] nA
AP 1-2 Amplitude Drop 1.0917 mV
AP 1 Steady State Amplitude Change 1.9642 mV
AP 1 Amplitude 75.6906 mV
AP 1 Width at Half Height 0.5200 ms
AP 1 Width (Peak To Trough) 4.0500 ms
AP 1 Rate of Change Peak to Trough -23.6052 mV/ms
AP 1 AHP Depth 19.9106 mV
AP2 Amplitude 74.5989 mV
AP2 Width at Half Height 0.5300 ms
AP 2 Width (Peak to Trough) 4.2000 ms
AP 2 Rate of Change Peak to Trough -22.5538 mV/ms
AP 2 AHP Depth 20.1271 mV
AP 1-2 Amplitude Change Percent -1.4423 %
AP 1-2 Half Width Change Percent 1.9231 %
AP 1-2 Rate of Change Peak to Trough Percent Change -4.4542 %
AP 1-2 AHP Depth Percent Change 1.0871 %
Input Resistance 403.9897 MΩ
AP 1 Delay Mean 22.2400 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 77.0100 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 69.4900 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -33.3333 %
Steady State Accommodation Mean -66.6667 %
Accommodation Rate to Steady State N/A %/ms
Accommodation at Steady State Mean -83.4735 %
Accommodation Rate Mean at Steady State 165.4554 ms
ISI CV 2.8560
ISI Median 232.2400 ms
ISI Burst Mean Change 53.7521 %
Spike Rate (Strong Stimulation) 9.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 7.6900 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 35.3300 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 29.4000 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2065.3500 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 54.8468 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 4079.79 µm2
Number of Stems 4.0
Number of Bifurcations 21.0
Number of Branches 45.0
Overall Width 275.756 µm
Overall Height 443.162 µm
Overall Depth 225.87 µm
Average Diameter 0.942146 µm
Total Length 3222.04 µm
Total Surface 7801.55 µm2
Total Volume 2823.54 µm3
Max Euclidean Distance 288.037 µm
Max Path Distance 330.907 µm
Max Branch Order 5.0
Average Contraction 0.941039
Total Fragmentation 699.0
Partition Asymmetry 0.212585
Average Rall's Ratio 1.9715
Average Bifurcation Angle Local 60.2444 °
Average Bifurcation Angle Remote 61.913 °
Fractal Dimension 1.004
Complexity Summary
State Equations 1621
Optimal Time-Step 0.00774 ms
Relative Complexity 405.80 HH
Model Size
Sections 46
Compartments 160
State Equations 1621
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00774 ms
Optimal Time-Step Error 0.13 %
Optimal Time-Step Benchmark Run Time 405.80 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.06 %
Max. Stable Time-Step Benchmark Run Time 784.90 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 12627 Hz
CVODE Steps Per AP 736
CVODE Benchmark Run Time 412.77 HH
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