Layer 4 Burst Accommodating Bitufted Cell (5)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 4
Keywords: burst accommodating,Layer 4,Rat, somatosensory cortex, bitufted, biophysical, burst accommodating bitufted cell, Realistic Network, Neuron or other electrically excitable cell, Synapse, Spatio-temporal Activity Patterns, Detailed Neuronal Models
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000126
bAC217_L4_BTC_ee19c75ca3_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000126
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -71.97 mV
Rheobase Current Interval (0.04486, 0.04578] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0185 nA
Testing Temperature 34.0 °C
Stability Interval [-1.5625, 15.0] nA
AP 1-2 Amplitude Drop 1.4502 mV
AP 1 Steady State Amplitude Change 3.8876 mV
AP 1 Amplitude 73.3274 mV
AP 1 Width at Half Height 0.5300 ms
AP 1 Width (Peak To Trough) 3.5100 ms
AP 1 Rate of Change Peak to Trough -26.2101 mV/ms
AP 1 AHP Depth 18.6701 mV
AP2 Amplitude 71.8771 mV
AP2 Width at Half Height 0.5500 ms
AP 2 Width (Peak to Trough) 3.6600 ms
AP 2 Rate of Change Peak to Trough -24.5614 mV/ms
AP 2 AHP Depth 18.0175 mV
AP 1-2 Amplitude Change Percent -1.9778 %
AP 1-2 Half Width Change Percent 3.7736 %
AP 1-2 Rate of Change Peak to Trough Percent Change -6.2904 %
AP 1-2 AHP Depth Percent Change -3.4950 %
Input Resistance 423.6409 MΩ
AP 1 Delay Mean 18.7700 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 67.9400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 57.9800 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -75.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.1456 %/ms
Accommodation at Steady State Mean -84.5084 %
Accommodation Rate Mean at Steady State 158.7281 ms
ISI CV 2.9178
ISI Median 213.6600 ms
ISI Burst Mean Change 35.8349 %
Spike Rate (Strong Stimulation) 10.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 6.5100 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 32.2600 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 27.3150 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2047.8000 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 44.9373 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 4955.95 µm2
Number of Stems 6.0
Number of Bifurcations 19.0
Number of Branches 43.0
Overall Width 258.058 µm
Overall Height 462.629 µm
Overall Depth 216.38 µm
Average Diameter 0.841585 µm
Total Length 3142.76 µm
Total Surface 6351.38 µm2
Total Volume 2530.19 µm3
Max Euclidean Distance 320.372 µm
Max Path Distance 374.28 µm
Max Branch Order 6.0
Average Contraction 0.972355
Total Fragmentation 931.0
Partition Asymmetry 0.419458
Average Rall's Ratio 0.725714
Average Bifurcation Angle Local 42.8176 °
Average Bifurcation Angle Remote 53.5376 °
Fractal Dimension 1.00575
Complexity Summary
Relative Complexity 400.28 HH
State Equations 1581
Optimal Time-Step 0.00778 ms
Model Size
Sections 44
Compartments 156
State Equations 1581
Variable Time-Step Complexity
CVODE Steady State Step Frequency 13932 Hz
CVODE Steps Per AP 738
CVODE Benchmark Run Time 400.28 HH
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