Layer 4 Burst Accommodating Bitufted Cell (4)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 4
Keywords: burst accommodating,Layer 4,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000125
bAC217_L4_BTC_ede3831900_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000125
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -72.24 mV
Rheobase Current Interval (0.05951, 0.06065] nA
Threshold Current Interval (0.23438, 0.29297] nA
Bias Current (to -80.00 mV) -0.0201 nA
Testing Temperature 34.0 °C
Stability Interval [-1.5625, 15.0] nA
AP 1-2 Amplitude Drop 1.3703 mV
AP 1 Steady State Amplitude Change 2.3124 mV
AP 1 Amplitude 78.9497 mV
AP 1 Width at Half Height 0.4500 ms
AP 1 Width (Peak To Trough) 3.1400 ms
AP 1 Rate of Change Peak to Trough -31.7944 mV/ms
AP 1 AHP Depth 20.8846 mV
AP2 Amplitude 77.5794 mV
AP2 Width at Half Height 0.4600 ms
AP 2 Width (Peak to Trough) 3.2300 ms
AP 2 Rate of Change Peak to Trough -30.5554 mV/ms
AP 2 AHP Depth 21.1144 mV
AP 1-2 Amplitude Change Percent -1.7356 %
AP 1-2 Half Width Change Percent 2.2222 %
AP 1-2 Rate of Change Peak to Trough Percent Change -3.8969 %
AP 1-2 AHP Depth Percent Change 1.1005 %
Input Resistance 364.1575 MΩ
AP 1 Delay Mean 15.3700 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 59.9100 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 51.3650 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -50.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.1623 %/ms
Accommodation at Steady State Mean -85.1492 %
Accommodation Rate Mean at Steady State 144.0250 ms
ISI CV 3.0257
ISI Median 196.4600 ms
ISI Burst Mean Change 30.6466 %
Spike Rate (Strong Stimulation) 11.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 5.2300 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 29.1300 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 25.2450 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2044.0100 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 54.5119 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 6347.0 µm2
Number of Stems 4.0
Number of Bifurcations 24.0
Number of Branches 51.0
Overall Width 234.952 µm
Overall Height 432.781 µm
Overall Depth 255.18 µm
Average Diameter 0.684543 µm
Total Length 3681.93 µm
Total Surface 7023.97 µm2
Total Volume 2752.01 µm3
Max Euclidean Distance 335.462 µm
Max Path Distance 478.826 µm
Max Branch Order 5.0
Average Contraction 0.954627
Total Fragmentation 1476.0
Partition Asymmetry 0.468452
Average Rall's Ratio 1.06357
Average Bifurcation Angle Local 57.3349 °
Average Bifurcation Angle Remote 79.1436 °
Fractal Dimension 1.00707
Complexity Summary
State Equations 1881
Optimal Time-Step 0.00787 ms
Relative Complexity 426.44 HH
Model Size
Sections 52
Compartments 186
State Equations 1881
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00787 ms
Optimal Time-Step Error 0.10 %
Optimal Time-Step Benchmark Run Time 426.44 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.07 %
Max. Stable Time-Step Benchmark Run Time 838.47 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 12403 Hz
CVODE Steps Per AP 783
CVODE Benchmark Run Time 446.36 HH
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