Layer 4 Burst Accommodating Bitufted Cell (3)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 4
Keywords: burst accommodating,Layer 4,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000124
bAC217_L4_BTC_9f1127ad33_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000124
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -74.45 mV
Rheobase Current Interval (0.05035, 0.05127] nA
Threshold Current Interval (0.17578, 0.23438] nA
Bias Current (to -80.00 mV) -0.0089 nA
Testing Temperature 34.0 °C
Stability Interval [-0.625, 15.0] nA
AP 1-2 Amplitude Drop 3.0487 mV
AP 1 Steady State Amplitude Change 3.7785 mV
AP 1 Amplitude 81.6002 mV
AP 1 Width at Half Height 0.4500 ms
AP 1 Width (Peak To Trough) 3.6000 ms
AP 1 Rate of Change Peak to Trough -29.5038 mV/ms
AP 1 AHP Depth 24.6135 mV
AP2 Amplitude 78.5515 mV
AP2 Width at Half Height 0.4500 ms
AP 2 Width (Peak to Trough) 3.6900 ms
AP 2 Rate of Change Peak to Trough -28.1157 mV/ms
AP 2 AHP Depth 25.1955 mV
AP 1-2 Amplitude Change Percent -3.7362 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -4.7047 %
AP 1-2 AHP Depth Percent Change 2.3647 %
Input Resistance 563.1850 MΩ
AP 1 Delay Mean 10.4800 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 49.3800 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 109.2850 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -33.3333 %
Steady State Accommodation Mean -33.3333 %
Accommodation Rate to Steady State -0.0722 %/ms
Accommodation at Steady State Mean -83.2594 %
Accommodation Rate Mean at Steady State 124.9159 ms
ISI CV 3.3856
ISI Median 226.5900 ms
ISI Burst Mean Change 361.8766 %
Spike Rate (Strong Stimulation) 10.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 4.3000 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 26.3300 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 23.6600 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2128.7300 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 70.1041 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 4900.81 µm2
Number of Stems 3.0
Number of Bifurcations 10.0
Number of Branches 22.0
Overall Width 84.1083 µm
Overall Height 368.515 µm
Overall Depth 113.29 µm
Average Diameter 1.26167 µm
Total Length 1073.59 µm
Total Surface 3736.97 µm2
Total Volume 2560.69 µm3
Max Euclidean Distance 232.836 µm
Max Path Distance 284.297 µm
Max Branch Order 3.0
Average Contraction 0.954786
Total Fragmentation 905.0
Partition Asymmetry 0.433333
Average Rall's Ratio 0.792143
Average Bifurcation Angle Local 54.2559 °
Average Bifurcation Angle Remote 41.2814 °
Fractal Dimension 1.00897
Complexity Summary
State Equations 571
Optimal Time-Step 0.00777 ms
Relative Complexity 133.14 HH
Model Size
Sections 23
Compartments 55
State Equations 571
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00777 ms
Optimal Time-Step Error 0.15 %
Optimal Time-Step Benchmark Run Time 133.14 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.01 %
Max. Stable Time-Step Benchmark Run Time 258.38 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 13921 Hz
CVODE Steps Per AP 524
CVODE Benchmark Run Time 130.22 HH
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