Layer 4 Burst Accommodating Bitufted Cell (1)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 4
Keywords: burst accommodating,Layer 4,Rat, somatosensory cortex, bitufted, biophysical, burst accommodating bitufted cell, Realistic Network, Neuron or other electrically excitable cell, Synapse, Spatio-temporal Activity Patterns, Detailed Neuronal Models
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000122
bAC217_L4_BTC_070d4f32f0_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000122
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -72.30 mV
Rheobase Current Interval (0.04532, 0.04601] nA
Threshold Current Interval (0.11719, 0.17578] nA
Bias Current (to -80.00 mV) -0.0122 nA
Testing Temperature 34.0 °C
Stability Interval [-0.3125, 15.0] nA
AP 1-2 Amplitude Drop 11.1994 mV
AP 1 Steady State Amplitude Change 16.1151 mV
AP 1 Amplitude 81.3956 mV
AP 1 Width at Half Height 0.4300 ms
AP 1 Width (Peak To Trough) 2.0100 ms
AP 1 Rate of Change Peak to Trough -51.0259 mV/ms
AP 1 AHP Depth 21.1664 mV
AP2 Amplitude 70.1962 mV
AP2 Width at Half Height 0.4800 ms
AP 2 Width (Peak to Trough) 2.1900 ms
AP 2 Rate of Change Peak to Trough -41.5299 mV/ms
AP 2 AHP Depth 20.7543 mV
AP 1-2 Amplitude Change Percent -13.7592 %
AP 1-2 Half Width Change Percent 11.6279 %
AP 1-2 Rate of Change Peak to Trough Percent Change -18.6101 %
AP 1-2 AHP Depth Percent Change -1.9470 %
Input Resistance 611.3972 MΩ
AP 1 Delay Mean 6.7400 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 52.9400 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 66.7150 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -50.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.1267 %/ms
Accommodation at Steady State Mean -85.7273 %
Accommodation Rate Mean at Steady State 148.7794 ms
ISI CV 2.9745
ISI Median 223.5250 ms
ISI Burst Mean Change 88.8095 %
Spike Rate (Strong Stimulation) 12.0000 Hz
AP 1 Delay Mean (Strong Stimulation) 2.5200 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 21.2700 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 19.5950 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2170.1300 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 134.8519 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 3545.28 µm2
Number of Stems 3.0
Number of Bifurcations 39.0
Number of Branches 80.0
Overall Width 113.593 µm
Overall Height 646.072 µm
Overall Depth 120.81 µm
Average Diameter 0.357926 µm
Total Length 4024.12 µm
Total Surface 4724.46 µm2
Total Volume 1667.21 µm3
Max Euclidean Distance 526.172 µm
Max Path Distance 569.474 µm
Max Branch Order 13.0
Average Contraction 0.937028
Total Fragmentation 6034.0
Partition Asymmetry 0.614774
Average Rall's Ratio 1.51333
Average Bifurcation Angle Local 42.206 °
Average Bifurcation Angle Remote 66.7535 °
Fractal Dimension 1.01689
Complexity Summary
Relative Complexity 739.44 HH
State Equations 2151
Optimal Time-Step 0.00533 ms
Model Size
Sections 81
Compartments 213
State Equations 2151
Variable Time-Step Complexity
CVODE Steady State Step Frequency 24011 Hz
CVODE Steps Per AP 610
CVODE Benchmark Run Time 739.44 HH
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