Layer 4 Burst Accommodating Bipolar Cell (3)

Model Type:
Cell
Neurolex IDs: Bipolar Cell
Neocortex Layer 4
Keywords: burst accommodating,Layer 4,GABAergic, inhibitory, neocortex, rat, somatosensory cortex, bipolar
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000119
bAC217_L4_BP_a0e639c5ea_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000119
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -72.26 mV
Rheobase Current Interval (0.02266, 0.02289] nA
Threshold Current Interval (0.00000, 0.05859] nA
Bias Current (to -80.00 mV) -0.0089 nA
Testing Temperature 34.0 °C
Stability Interval [-0.3125, 15.0] nA
AP 1-2 Amplitude Drop 4.6313 mV
AP 1 Steady State Amplitude Change 3.9549 mV
AP 1 Amplitude 93.0385 mV
AP 1 Width at Half Height 0.3900 ms
AP 1 Width (Peak To Trough) 1.7300 ms
AP 1 Rate of Change Peak to Trough -68.4596 mV/ms
AP 1 AHP Depth 25.3965 mV
AP2 Amplitude 88.4073 mV
AP2 Width at Half Height 0.3900 ms
AP 2 Width (Peak to Trough) 1.6700 ms
AP 2 Rate of Change Peak to Trough -68.3413 mV/ms
AP 2 AHP Depth 25.7226 mV
AP 1-2 Amplitude Change Percent -4.9778 %
AP 1-2 Half Width Change Percent 0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -0.1728 %
AP 1-2 AHP Depth Percent Change 1.2841 %
Input Resistance 1069.4525 MΩ
AP 1 Delay Mean 4.6800 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 46.1500 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 58.0350 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -50.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.1497 %/ms
Accommodation at Steady State Mean -86.4090 %
Accommodation Rate Mean at Steady State 150.5681 ms
ISI CV 2.9218
ISI Median 210.8050 ms
ISI Burst Mean Change 79.8891 %
Spike Rate (Strong Stimulation) 10.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 1.8700 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 23.6100 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 22.9700 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2038.8300 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 73.9622 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 2094.2 µm2
Number of Stems 2.0
Number of Bifurcations 7.0
Number of Branches 15.0
Overall Width 42.4913 µm
Overall Height 891.781 µm
Overall Depth 50.4 µm
Average Diameter 1.07428 µm
Total Length 1255.21 µm
Total Surface 2599.01 µm2
Total Volume 900.846 µm3
Max Euclidean Distance 922.048 µm
Max Path Distance 939.428 µm
Max Branch Order 6.0
Average Contraction 0.990932
Total Fragmentation 256.0
Partition Asymmetry 0.857143
Average Rall's Ratio 1.51667
Average Bifurcation Angle Local 50.0247 °
Average Bifurcation Angle Remote 45.8429 °
Fractal Dimension 1.00177
Complexity Summary
State Equations 681
Optimal Time-Step 0.00795 ms
Relative Complexity 145.22 HH
Model Size
Sections 16
Compartments 66
State Equations 681
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00795 ms
Optimal Time-Step Error 0.21 %
Optimal Time-Step Benchmark Run Time 145.22 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 0.94 %
Max. Stable Time-Step Benchmark Run Time 288.58 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 13958 Hz
CVODE Steps Per AP 535
CVODE Benchmark Run Time 146.61 HH
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