Layer 2/3 Burst Accommodating Bitufted Cell (3)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: burst accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000094
bAC217_L23_BTC_d9b97f1242_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000094
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.68 mV
Rheobase Current Interval (0.07965, 0.08102] nA
Threshold Current Interval (0.29297, 0.35156] nA
Bias Current (to -80.00 mV) -0.0396 nA
Testing Temperature 34.0 °C
Stability Interval [-2.1875, 15.0] nA
AP 1-2 Amplitude Drop 1.1467 mV
AP 1 Steady State Amplitude Change 1.9852 mV
AP 1 Amplitude 76.4120 mV
AP 1 Width at Half Height 0.4500 ms
AP 1 Width (Peak To Trough) 2.3300 ms
AP 1 Rate of Change Peak to Trough -42.0345 mV/ms
AP 1 AHP Depth 21.5285 mV
AP2 Amplitude 75.2653 mV
AP2 Width at Half Height 0.4400 ms
AP 2 Width (Peak to Trough) 2.3500 ms
AP 2 Rate of Change Peak to Trough -41.2394 mV/ms
AP 2 AHP Depth 21.6472 mV
AP 1-2 Amplitude Change Percent -1.5006 %
AP 1-2 Half Width Change Percent -2.2222 %
AP 1-2 Rate of Change Peak to Trough Percent Change -1.8917 %
AP 1-2 AHP Depth Percent Change 0.5515 %
Input Resistance 231.8766 MΩ
AP 1 Delay Mean 20.1400 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 71.1900 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 56.6850 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -25.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.1127 %/ms
Accommodation at Steady State Mean -80.1817 %
Accommodation Rate Mean at Steady State 193.7885 ms
ISI CV 3.1760
ISI Median 185.9500 ms
ISI Burst Mean Change 22.0764 %
Spike Rate (Strong Stimulation) 11.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 5.6400 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 30.7900 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 26.4300 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2055.1500 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 38.5198 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 8729.19 µm2
Number of Stems 4.0
Number of Bifurcations 31.0
Number of Branches 65.0
Overall Width 467.889 µm
Overall Height 493.424 µm
Overall Depth 376.45 µm
Average Diameter 0.786662 µm
Total Length 5317.26 µm
Total Surface 13526.1 µm2
Total Volume 5396.76 µm3
Max Euclidean Distance 389.621 µm
Max Path Distance 459.045 µm
Max Branch Order 7.0
Average Contraction 0.95593
Total Fragmentation 3591.0
Partition Asymmetry 0.402381
Average Rall's Ratio 1.09618
Average Bifurcation Angle Local 16.3784 °
Average Bifurcation Angle Remote 49.6473 °
Fractal Dimension 1.00953
Complexity Summary
State Equations 2621
Optimal Time-Step 0.00781 ms
Relative Complexity 618.16 HH
Model Size
Sections 66
Compartments 260
State Equations 2621
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00781 ms
Optimal Time-Step Error 0.15 %
Optimal Time-Step Benchmark Run Time 618.16 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.18 %
Max. Stable Time-Step Benchmark Run Time 1206.58 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 12534 Hz
CVODE Steps Per AP 610
CVODE Benchmark Run Time 591.67 HH
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