Layer 2/3 Burst Accommodating Bitufted Cell (2)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Keywords: burst accommodating,Layer 2, Layer 3, Layer 2/3,Rat, somatosensory cortex, bitufted
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000093
bAC217_L23_BTC_9ad0430657_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000093
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Delayed Regular Spikers (dRS)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -70.05 mV
Rheobase Current Interval (0.04120, 0.04234] nA
Threshold Current Interval (0.23438, 0.29297] nA
Bias Current (to -80.00 mV) -0.0267 nA
Testing Temperature 34.0 °C
Stability Interval [-1.25, 15.0] nA
AP 1-2 Amplitude Drop 0.0978 mV
AP 1 Steady State Amplitude Change 0.7497 mV
AP 1 Amplitude 74.1322 mV
AP 1 Width at Half Height 0.5400 ms
AP 1 Width (Peak To Trough) 3.5200 ms
AP 1 Rate of Change Peak to Trough -26.3863 mV/ms
AP 1 AHP Depth 18.7476 mV
AP2 Amplitude 74.0344 mV
AP2 Width at Half Height 0.5400 ms
AP 2 Width (Peak to Trough) 3.5600 ms
AP 2 Rate of Change Peak to Trough -25.9680 mV/ms
AP 2 AHP Depth 18.4116 mV
AP 1-2 Amplitude Change Percent -0.1319 %
AP 1-2 Half Width Change Percent -0.0000 %
AP 1-2 Rate of Change Peak to Trough Percent Change -1.5853 %
AP 1-2 AHP Depth Percent Change -1.7921 %
Input Resistance 376.1142 MΩ
AP 1 Delay Mean 26.6100 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 87.2000 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 71.8250 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -50.0000 %
Steady State Accommodation Mean -50.0000 %
Accommodation Rate to Steady State -0.0818 %/ms
Accommodation at Steady State Mean -79.9865 %
Accommodation Rate Mean at Steady State 193.7207 ms
ISI CV 3.1259
ISI Median 228.2850 ms
ISI Burst Mean Change 37.0853 %
Spike Rate (Strong Stimulation) 9.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 8.5300 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 37.6600 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 30.9300 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2080.1000 ms
Frequency Filter Type Constant
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 3382.09 µm2
Number of Stems 6.0
Number of Bifurcations 26.0
Number of Branches 57.0
Overall Width 257.817 µm
Overall Height 703.248 µm
Overall Depth 267.93 µm
Average Diameter 0.586381 µm
Total Length 4950.5 µm
Total Surface 8992.22 µm2
Total Volume 2390.7 µm3
Max Euclidean Distance 473.903 µm
Max Path Distance 534.139 µm
Max Branch Order 5.0
Average Contraction 0.955562
Total Fragmentation 2065.0
Partition Asymmetry 0.447086
Average Rall's Ratio 1.19857
Average Bifurcation Angle Local 48.363 °
Average Bifurcation Angle Remote 70.0144 °
Fractal Dimension 1.00684
Complexity Summary
State Equations 2521
Optimal Time-Step 0.00780 ms
Relative Complexity 605.54 HH
Model Size
Sections 58
Compartments 250
State Equations 2521
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00780 ms
Optimal Time-Step Error 0.14 %
Optimal Time-Step Benchmark Run Time 605.54 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 1.61 %
Max. Stable Time-Step Benchmark Run Time 1179.81 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 12836 Hz
CVODE Steps Per AP 685
CVODE Benchmark Run Time 611.13 HH
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