Layer 2/3 Burst Accommodating Bipolar Cell (4)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Bipolar Cell
Keywords: burst accommodating,Layer 2, Layer 3, Layer 2/3,GABAergic, inhibitory, neocortex, rat, somatosensory cortex, bipolar
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000090
bAC217_L23_BP_472b717f1f_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000090
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -75.49 mV
Rheobase Current Interval (0.02426, 0.02472] nA
Threshold Current Interval (0.05859, 0.11719] nA
Bias Current (to -70.00 mV) 0.0052 nA
Testing Temperature 34.0 °C
Stability Interval [-0.3125, 15.0] nA
AP 1-2 Amplitude Drop 3.7805 mV
AP 1 Steady State Amplitude Change 3.5845 mV
AP 1 Amplitude 84.5277 mV
AP 1 Width at Half Height 0.4500 ms
AP 1 Width (Peak To Trough) 3.3800 ms
AP 1 Rate of Change Peak to Trough -32.6723 mV/ms
AP 1 AHP Depth 25.9048 mV
AP2 Amplitude 80.7472 mV
AP2 Width at Half Height 0.4400 ms
AP 2 Width (Peak to Trough) 3.4600 ms
AP 2 Rate of Change Peak to Trough -31.0781 mV/ms
AP 2 AHP Depth 26.7830 mV
AP 1-2 Amplitude Change Percent -4.4725 %
AP 1-2 Half Width Change Percent -2.2222 %
AP 1-2 Rate of Change Peak to Trough Percent Change -4.8794 %
AP 1-2 AHP Depth Percent Change 3.3903 %
Input Resistance 1154.0154 MΩ
AP 1 Delay Mean 11.3600 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 57.1200 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 157.9550 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -33.3333 %
Steady State Accommodation Mean -33.3333 %
Accommodation Rate to Steady State -0.1019 %/ms
Accommodation at Steady State Mean -82.7077 %
Accommodation Rate Mean at Steady State 10.0000 ms
ISI CV 3.2760
ISI Median 263.3500 ms
ISI Burst Mean Change 490.3628 %
Spike Rate (Strong Stimulation) 8.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 4.7400 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 28.6200 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 26.7950 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2133.4700 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 61.1607 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 2271.45 µm2
Number of Stems 3.0
Number of Bifurcations 6.0
Number of Branches 14.0
Overall Width 50.7505 µm
Overall Height 253.875 µm
Overall Depth 41.1 µm
Average Diameter 1.24674 µm
Total Length 689.756 µm
Total Surface 1856.7 µm2
Total Volume 892.363 µm3
Max Euclidean Distance 156.007 µm
Max Path Distance 182.675 µm
Max Branch Order 3.0
Average Contraction 0.980412
Total Fragmentation 201.0
Partition Asymmetry 0.666667
Average Rall's Ratio 2.385
Average Bifurcation Angle Local 45.8522 °
Average Bifurcation Angle Remote 41.2987 °
Fractal Dimension 1.00273
Complexity Summary
State Equations 351
Optimal Time-Step 0.00788 ms
Relative Complexity 84.75 HH
Model Size
Sections 15
Compartments 33
State Equations 351
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00788 ms
Optimal Time-Step Error 0.08 %
Optimal Time-Step Benchmark Run Time 84.75 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 0.82 %
Max. Stable Time-Step Benchmark Run Time 166.82 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14992 Hz
CVODE Steps Per AP 497
CVODE Benchmark Run Time 87.61 HH
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