Layer 2/3 Burst Accommodating Bipolar Cell (2)

Model Type:
Cell
Neurolex IDs: Neocortex Layer 2
Neocortex Layer 3
Bipolar Cell
Keywords: burst accommodating,Layer 2, Layer 3, Layer 2/3,GABAergic, inhibitory, neocortex, rat, somatosensory cortex, bipolar
Publication: Markram, et. al. (2015) Reconstruction and Simulation of Neocortical Microcircuitry.
Authors:
H Markram   Eilif Muller   Srikanth Ramaswamy   Michael Reimann   Marwan Abdellah   Carlos Sanchez   Anastasia Ailamaki   Lidia Alonso-Nanclares   Nicolas Antille   Selim Arsever   Guy Kahou   Thomas Berger   Ahmet Bilgili   Nenad Buncic   Athanassia Chalimourda   Giuseppe Chindemi   Jean-Denis Courcol   Fabien Delalondre   Vincent Delattre   Shaul Druckmann   Raphael Dumusc   James Dynes   Stefan Eilemann   Eyal Gal   Michael Gevaert   Jean-Pierre Ghobril   Albert Gidon   Joe Graham   Anirudh Gupta   Valentin Haenel   E Hay   Thomas Heinis   Juan Hernando   Michael Hines   Lida Kanari   Daniel Keller   John Kenyon   Georges Khazen   Yihwa Kim   James King   Zoltan Kisvarday   Pramod Kumbhar   Jean-Vincent Le Bé   Bruno Magalhães   Angel Merchán-Pérez   Julie Meystre   Benjamin Morrice   Jeffrey Muller   Alberto Muñoz-Céspedes   Shruti Muralidhar   Keerthan Muthurasa   Daniel Nachbaur   Taylor Newton   Max Nolte   Aleksandr Ovcharenko   Juan Palacios   Luis Pastor   Rodrigo Perin   Rajnish Ranjan   Imad Riachi   Juan Riquelme   Christian Rössert   Konstantinos Sfyrakis   Ying Shi   Julian Shillcock   Gilad Silberberg   Ricardo Silva   Farhan Tauheed   Martin Telefont   Maria Toledo-Rodriguez   Thomas Tränkler   Werner Van Geit   Jafet Diaz   Richard Walker   Yun Wang   Stefano Zaninetta   Javier DeFelipe   S Hill   Idan Segev   F Schürmann  
Translators: Padraig Gleeson  
Sources:
Files:
Model ID NeuroML File
NMLCL000088
bAC217_L23_BP_2f6bdee09f_0_0.cell.nml
( view NeuroML )
NMLCH000101
Ca.channel.nml
( view NeuroML )
NMLCH000103
Ca_LVAst.channel.nml
( view NeuroML )
NMLCH000104
Ih.channel.nml
( view NeuroML )
NMLCH000105
Im.channel.nml
( view NeuroML )
NMLCH000107
K_Pst.channel.nml
( view NeuroML )
NMLCH000108
K_Tst.channel.nml
( view NeuroML )
NMLCH000109
Nap_Et2.channel.nml
( view NeuroML )
NMLCH000110
NaTa_t.channel.nml
( view NeuroML )
NMLCH000111
NaTs2_t.channel.nml
( view NeuroML )
NMLCH000112
SK_E2.channel.nml
( view NeuroML )
NMLCH000113
SKv3_1.channel.nml
( view NeuroML )
NMLCH000114
pas.channel.nml
( view NeuroML )
NMLCN000001
CaDynamics_E2_NML2.nml
( view NeuroML )
Notes: None
Model Id: NMLCL000088
Associated Channels:
Associated Synapses: None
Associated Networks: None
Current Clamp Response
Protocol:
Meta Protocol: -
Stimulus: -
Closest Electrophysiology Cluster
⇛Multi-Spikers (MS)
   ⇛Regular Multi-Spikers (rMS)
      ⇛Bursters (B)
Differentiating Features
Models with Similar Electrophysiology Properties
All Electrophysiology Properties
Is Passive No
Is Intrinsically Spiking No
Resting Voltage -75.43 mV
Rheobase Current Interval (0.02426, 0.02472] nA
Threshold Current Interval (0.05859, 0.11719] nA
Bias Current (to -70.00 mV) 0.0051 nA
Testing Temperature 34.0 °C
Stability Interval [-0.3125, 15.0] nA
AP 1-2 Amplitude Drop 3.2732 mV
AP 1 Steady State Amplitude Change 3.5236 mV
AP 1 Amplitude 84.4548 mV
AP 1 Width at Half Height 0.4300 ms
AP 1 Width (Peak To Trough) 3.5000 ms
AP 1 Rate of Change Peak to Trough -31.5656 mV/ms
AP 1 AHP Depth 26.0248 mV
AP2 Amplitude 81.1816 mV
AP2 Width at Half Height 0.4400 ms
AP 2 Width (Peak to Trough) 3.5700 ms
AP 2 Rate of Change Peak to Trough -30.0828 mV/ms
AP 2 AHP Depth 26.2142 mV
AP 1-2 Amplitude Change Percent -3.8757 %
AP 1-2 Half Width Change Percent 2.3256 %
AP 1-2 Rate of Change Peak to Trough Percent Change -4.6973 %
AP 1-2 AHP Depth Percent Change 0.7279 %
Input Resistance 1143.5133 MΩ
AP 1 Delay Mean 11.5100 ms
AP 1 Delay SD 0.0000 ms
AP 2 Delay Mean 56.9700 ms
AP 2 Delay SD 0.0000 ms
Burst 1 ISI Mean 154.5250 ms
Burst 1 ISI SD 0.0000 ms
Initial Accommodation Mean -33.3333 %
Steady State Accommodation Mean -33.3333 %
Accommodation Rate to Steady State -0.1040 %/ms
Accommodation at Steady State Mean -82.6256 %
Accommodation Rate Mean at Steady State 10.0000 ms
ISI CV 3.2808
ISI Median 260.9600 ms
ISI Burst Mean Change 479.8284 %
Spike Rate (Strong Stimulation) 8.5000 Hz
AP 1 Delay Mean (Strong Stimulation) 4.7500 ms
AP 1 Delay SD (Strong Stimulation) 0.0000 ms
AP 2 Delay Mean (Strong Stimulation) 28.6700 ms
AP 2 Delay SD (Strong Stimulation) 0.0000 ms
Burst 1 ISI Mean (Strong Stimulation) 26.7050 ms
Burst 1 ISI SD (Strong Stimulation) 0.0000 ms
Ramp First Spike Time 2133.5300 ms
Frequency Filter Type Low-Pass
Frequency Filter Pass Below 62.0301 Hz
3D Structure and Propagation of Activity
L-Measure Properties
Soma Surface 2271.45 µm2
Number of Stems 3.0
Number of Bifurcations 6.0
Number of Branches 14.0
Overall Width 54.391 µm
Overall Height 266.035 µm
Overall Depth 23.71 µm
Average Diameter 1.24674 µm
Total Length 716.324 µm
Total Surface 1884.99 µm2
Total Volume 888.854 µm3
Max Euclidean Distance 174.629 µm
Max Path Distance 202.167 µm
Max Branch Order 3.0
Average Contraction 0.980833
Total Fragmentation 201.0
Partition Asymmetry 0.666667
Average Rall's Ratio 2.385
Average Bifurcation Angle Local 46.0605 °
Average Bifurcation Angle Remote 40.8721 °
Fractal Dimension 1.00277
Complexity Summary
State Equations 371
Optimal Time-Step 0.00774 ms
Relative Complexity 87.95 HH
Model Size
Sections 15
Compartments 35
State Equations 371
Fixed Time-Step Run Time vs. Voltage Potential Error
Run Time-vs-Error Optimal Time-Step 0.00774 ms
Optimal Time-Step Error 0.11 %
Optimal Time-Step Benchmark Run Time 87.95 HH
 
Maximum Stable Time-Step 0.0625 ms
Maximum Stable Time-Step Error 0.85 %
Max. Stable Time-Step Benchmark Run Time 170.22 HH
Variable Time-Step Complexity
CVODE Steady State Step Frequency 14832 Hz
CVODE Steps Per AP 506
CVODE Benchmark Run Time 89.07 HH
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